FDS6681Z
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6681Z
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.5 W -30 V Continuous Drain Current (ID):20 A 260 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 4.6 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.13 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -20 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -1.8 V |
| Number of Channels | 1 |
| Input capacitance | 7.54 nF |
| Continuous Drain Current (ID) | 20 A |
| Rds On Max | 4.6 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 660 ns |
| Element Configuration | Single |
| Rise Time | 9 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 260 nC |
| Drain to Source Resistance | 3.8 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.8 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2020
Distributors
pcbx
pcbxUnit Price$0.82243
Ext.Price$0.82243
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.82243 | $0.82243 |
| 10 | $0.66941 | $6.69410 |
| 25 | $0.61609 | $15.40225 |
| 50 | $0.56702 | $28.35100 |
| 100 | $0.52186 | $52.18600 |
| 300 | $0.49839 | $149.51700 |
| 500 | $0.47598 | $237.99000 |
| 1000 | $0.45299 | $452.99000 |